Method for precision integrated circuit die singulation using differential etch rates

ABSTRACT

A preprocessed semiconductor substrate such as a wafer is provided with a metal etch mask which defines singulation channels on the substrate surface. An isotropic etch process is used to define a singulation channel with a first depth extending into the semiconductor substrate material. A second anisotropic etch process is used to increase the depth of the singulation channel while providing substantially vertical singulation channel sidewalls. The singulation channel can be extended through the depth of the substrate or, in an alternative embodiment, a predetermined portion of the inactive surface of the substrate removed to expose the singulation channels. In this manner, semiconductor die can be precisely singulated from a wafer while maintaining vertical die sidewalls.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a Broadening Reissue of U.S. patentapplication Ser. No. 11/197,828, filed Aug. 5, 2005 (now U.S. Pat. No.7,335,576), which claims priority to U.S. provisional patent applicationSer. Provisional Patent Application No. 60/628,742, filed Nov. 18, 2004,and U.S. provisional patent application Ser. Provisional PatentApplication No. 60/617,426, filed Oct. 8, 2004, each of which are isincorporated fully herein by reference and to which priority is claimedpursuant to 35 USC 119.

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH AND DEVELOPMENT

N/A

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to semiconductor wafer processing. Specificallythe invention relates to a method for the precise singulation ofintegrated circuit die from a semiconductor substrate.

2. Description of the Prior Art

Semiconductor processing generally comprises multiple photolithographic,etching, plating and doping steps to form an array of individualintegrated circuit die on the surface of a semiconductor substrate suchas a wafer. Integrated circuit die densities frequently range in thethousands of die per wafer, each die of which is separated from theothers by a narrow inactive boundary referred to as a die “street”. Onceintegrated circuit die fabrication and test at the wafer level iscomplete, the individual die are “singulated” from the wafer forsubsequent leadframe attachment, wirebonding and encapsulation.Singulation is typically accomplished by cutting along the die streetsusing a dicing saw.

Automated dicing saws use specialty dicing blades commonly ranging from1-10 mils in width, which singulate the individual die from the wafer bycutting along the die streets. This mechanical method of singulationretains the undesirable attributes of backside wafer chipping and thecharacteristic “kerf” along the saw cut, which is the width of the bladeplus an additional width associated with mechanical tolerances of thesaw and blade. For instance, a dicing blade that is 35 microns in widthmay have a 40-42 micron kerf width, dependent on saw set up.

Applications where very high tolerance die singulation is requiredcannot accommodate the tolerances associated with blade dicing or, forthat matter, laser dicing. One such application relates to focal planearray integrated circuit chips used in four-sided, buttable stacks ofinterconnected die for use in large area mosaic focal plane detectorarrays. In such applications, die edge tolerances must be one micron orless to minimize loss of optical information and to maintain thebuttability of the stacks. The requirement of providing half-pixel orless separation between detector stacks can be met by defining the edgeof a detector die using an optically precise, photolithographic-baseddicing technique. Large arrays can be assembled from these stacks toform curved (concave or convex) mosaic focal plane arrays.

Precision die singulation applications have requirements for detectordie to be diced within one micron of active features on the die.Standard precision dicing is on the order of ±3 microns and cannot meetthe high tolerances noted above. Further, the edges of the detectors arerequired to be highly orthogonal to each other to ensure accuratebuttability. Existing dicing means do not provide the necessary accuracyfor the above applications.

What is needed is a method for precision die singulation method whichovercomes these limitations in the prior art.

BRIEF SUMMARY OF THE INVENTION

The illustrated embodiments of the invention disclose a method whichtakes advantage of differential etch rates in semiconductor substratematerials by using one or more mask and etch steps and an optionalback-thinning of a partially singulated wafer.

In a preferred embodiment, a semiconductor substrate, such as a wafer,with individual integrated circuit die formed thereon, is provided witha metal etch mask disposed over the integrated circuitry on the wafer.The etch mask defines exposed areas and unexposed (i.e., masked) areason the surface of the wafer. A singulation channel is formed in theexposed areas using an isotropic reactive ion etch whereby the initialchannel has a depth below the base field oxide on the substrate and intothe silicon substrate itself. The etch mask is removed and subsequentanisotropic deep reactive ion etch is used to etch into the exposedsilicon in the channel.

The channeled wafer is then back-thinned using mechanical, chemical orCMP methods to the depth of the channel whereby the individual die aresingulated from the wafer by the back-thinning step.

Alternative embodiments may comprise, without limitation, one or moreadditional photoresist steps and varying etch depths and etch processes.

It is to be expressly understood that the invention also includes theproduct made from the method disclosed above.

While the apparatus and method has or will be described for the sake ofgrammatical fluidity with functional explanations, it is to be expresslyunderstood that the claims, unless expressly formulated under 35 USC112, are not to be construed as necessarily limited in any way by theconstruction of “means” or “steps” limitations, but are to be accordedthe full scope of the meaning and equivalents of the definition providedby the claims under the judicial doctrine of equivalents, and in thecase where the claims are expressly formulated under 35 USC 112 are tobe accorded full statutory equivalents under 35 USC 112.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top plan view of a semiconductor wafer with integratedcircuit die formed thereon.

FIG. 2 is a cross-section of a wafer prior to the first etch step of theinvention showing the oxynitride passivation layer removed to expose theetch mask.

FIG. 3 is a cross-section of a wafer subsequent to the first isotropicetch step of the invention.

FIG. 4 is a cross-section of a wafer prior to the second anisotropicetch step of the invention after the remaining etch mask has beenremoved.

FIG. 5 is a cross-section of a wafer subsequent to the secondanisotropic etch step of the invention.

FIG. 6 is a view of a preferred embodiment of a focal plane array stackconfiguration formed from singulated die of the invention and shows thedetector chip with interconnected support electronics in a “loaf ofbread” orientation.

FIGS. 7a and 7b illustrate preferred embodiments of the invention in theconfiguration of a convex and concave large area mosaic focal planearray formed from a plurality of integrated circuit stacks.

FIG. 8 shows yet a further preferred embodiment of a large area mosaicfocal plane array with interconnected support electronics in a coplanarorientation.

The invention and its various embodiments can now be better understoodby turning to the following detailed description of the preferredembodiments which are presented as illustrated examples of the inventiondefined in the claims. It is expressly understood that the invention asdefined by the claims may be broader than the illustrated embodimentsdescribed below.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

As is well known in the semiconductor manufacturing arts, a commonseries of semiconductor process steps is involved in the manufacturingof integrated circuit die.

Generally, such semiconductor process steps comprise:

1. Functional and schematic circuit design,

2. Circuit layout (which is dependent on factors such as feature size,material characteristics and foundry capabilities) resulting in acomposite circuit layout or drawing from which individual circuit layerpatterns are generated,

3. Digitizing each layer drawing,

4. Creating a reticle from each layer drawing comprising an image fordirectly patterning the image on a wafer or for the generation of aphotomask which may comprise multiple reticle images. (Chrome onglass/quartz is a typical reticle construction),

5. Forming a base field oxide layer on the surface of a semiconductorwafer (also referred to as a substrate herein) to form a protectivelayer and doping barrier,

6. Patterning the oxide layer to define locations for circuit elements,

7. One or more additional layering, patterning and doping operations forthe creation of desired circuit elements such as transistors (n-typeand/or p-type), capacitors, diodes, resistors and the like, and thecreation of insulation and/or conductive regions using appropriatepassivation materials (e.g., polysilicon), dopants, and metallization.Typically, an oxynitride layer is formed over the wafer afterfabrication to protect the underlying circuit elements from theenvironment and mechanical damage.

8. Upon completion of the above semiconductor process steps, wafer sort,test and dicing of the wafer for further processing typically follow.

Turning to the figures wherein like numerals designate like elementsamong the several views, FIG. 1 shows a semiconductor substrate, orwafer 1, having a first surface 5 and a second surface 10. First surface5 has one or more preformed integrated circuit die 15 formed thereonfabricated from the above semiconductor process steps, separated byinactive regions referred to herein as die streets 20. Prior artsingulation methods typically involve blade or laser dicing along diestreets 20.

Two etching processes are utilized in the disclosed invention; reactiveion etching (RIE) and deep reactive ion etching (DRIE).

Reactive ion etching involves the conversion of an etch gas into aplasma wherein an electrode is used to accelerate the ions in such amanner as to etch a semiconductor substrate using chemical and physicalreactions. Reactive ion etching tends to exhibit undesirable isotropicetching characteristics (i.e., vertical and lateral etching under aphotomask) that are not suitable for use where highly orthogonalsidewalls are desired.

Deep reactive ion etching is a variant of RIE that permits very highaspect ratio features to be fabricated with substantially orthogonalsidewalls because it is an anisotropic process. On the other hand, DRIEis not suitable for etching through the silicon oxide/dielectricfeatures in the layers contained in integrated circuit die but iswell-suited for bulk silicon etching. It is to be specifically notedthat any anisotropic etching process capable of vertical sidewalletching in the substrate may be used in the present invention.

The disclosed invention takes advantage of several characteristics ofsemiconductor processing; 1) silicon dioxide etches very slowly comparedto silicon in a deep reactive etching process, 2) metal patterns can beused as etch masks in a standard reactive etching process and, 3)accurate photoalignment of mask features to a tolerance of one micron orless cannot readily be achieved outside of a semiconductor foundryenvironment but can be obtained if the etch masks are patterned duringthe semiconductor processing steps at the semiconductor foundry.

As seen in FIG. 2, the cross section of substrate 1 shows multiplelayers of an exemplar integrated circuit die which, in FIG. 2 generallycomprise a base field oxide 22, a plurality of metal layers 25, 30 and35, and an oxynitride passivation layer 37, all layers of which arebuilt up upon first surface 5 of substrate 1. Metal layer 35 is thefinal metal layer and comprises at least one etch mask 50, preferablyformed of a metal material, which defines an exposed first surface area55. Tn a preferred embodiment, exposed surface area defines one or moredie streets 20.

First surface area 55 effectively comprises a sacrificial etch regionbelow die streets 20 which will be etched to create a singulationchannel for subsequent die singulation. Note that etch mask 50 may bedisposed at any layer of integrated circuit die 15 below whichprecision, orthogonal etching is desired, which is preferably above thefinal circuit element layer on a substrate or final metal layer providedat the semiconductor foundry.

A preferred embodiment of the invention incorporates defining a 1-2micron thick, 50 micron wide, aluminum “ring” circumscribing the firstsurface area 55 on the wafer at the final metal layer. This step isperformed during the above mentioned semiconductor processing steps toform an etch mask for subsequent silicon oxide etching. The definitionof the etch mask at the reticle level during the semiconductorprocessing steps permits the very high precision singulation of thedisclosed invention.

It has been determined that the aforementioned aluminum etch mask willetch during the RIE process, albeit at a much slower rate than thesilicon oxide layers under first surface area 55. A typical etch ratioof silicon oxide to aluminum is approximately 6:1 during this processstep. Accordingly, a 1-2 micron thick etch mask will allow a siliconoxide etch depth in the range of 6-12 microns before the etch mask isetched away by the process.

In cases where the entire active surface of a substrate is passivatedafter wafer fabrication, such as with an oxynitride layer, it will benecessary to expose the underlying preformed metal etch mask in aseparate process step as is well known in the semiconductor arts.

Referring to FIG. 3, a first photoresist 60 or equivalent structure isapplied over the surface of substrate 1 where to protect the majorportion of the substrate surface during the first RIE etching phase.First photoresist 60 should be applied such that only the metal etchmask 50 and the first surface areas to be etched are exposed to the RIEprocess. Failure to protect the remaining substrate surface could resultin the undesirable etching of the surface passivation/oxynitride layerof the wafer.

First surface area 55 is then exposed to an RIE etch process such as aCF4/SF6 process as is well known in the semiconductor processing arts.

As illustrated in FIG. 3, the silicon oxide layers below first surfacearea 55 have been etched to a predetermined first depth, preferably to adepth of 5-6 microns, to create a singulation channel 65. Singulationchannel 65 is preferably a depth of at least that of the integratedcircuit die layers and preferably penetrating below the lowermost fieldoxide layer 22 and exposing the semiconductor substrate material. Notethe depth of singulation channel 65 will be increased in subsequentprocess steps to allow the precision singulation of integrated circuitdie along the singulation channel

Referring now to FIGS. 4 and 5, at this process step, remaining portionsof etch mask 50 are substantially removed such as by a suitable etchingstep. This is necessary since the subsequent DRIE process isincompatible with exposed metal. A second photoresist step 67 is thenapplied to cover the remaining substrate surface areas other than thoseareas that will be exposed to the subsequent DRIE process.

First surface 5 is then exposed to a second etching process, preferablyan anisotropic DRIE process such as is used in the creation of MEMSstructures whereby the exposed silicon in singulation channel 65 is bulketched. Such etching processes are very anisotropic and allow highaspect ratio etching in silicon. In a preferred embodiment, DRIE etchdepths were on the order of 50-70 microns.

Two major DRIE processes, both of which are anisotropic, are applicableto the disclosed invention. The first DRIE fabrication method (i.e.,etching that involves little or no undercutting under a photomask)involves alternating etching and passivation layer creation wherein anetch phase is followed by the deposition of a passivation layer. Acommon process is the use of SF6 in the etch phase and the use of afluorocarbon (e.g., C4F8) in the passivation phase. A repeated etchphase occurs, primarily etching the base of the etched feature,penetrating and etching the passivation layer and underlying substratewhile having a lesser effect on the sidewall. By repeating the abovesteps, a substantially vertical sidewall in an etched feature can becreated, leaving a slightly scalloped vertical sidewall.

One such DRIE process is disclosed in U.S. Pat. No. 5,501,893 toLaermer, et al., entitled Method of Anisotropically Etching Silicon, theentirety of which is incorporated fully herein by reference.

An alternate DRIE process for use with the disclosed invention comprisesthe use cryogenic temperatures in the order of −100 C to −130 C toreduce the sidewall etch rate during the etch phase and can be used forthrough-wafer etching. This process uses spontaneous chemical etchingusing fluorine radicals (e.g. SF6) and using oxygen radicals (e.g.,SiOxFy) for passivation to allow anisotropic etching.

In an alternative preferred embodiment, a predetermined portion 70 ofsecond surface 10 is removed slightly beyond the depth of singulationchannel 65, such as by lapping, grinding, polishing or chemicalmechanical polishing (CMP) or equivalent processes as are well known inthe semiconductor arts. When the floor of the singulation channel isexposed by this step, the individual die 15 are released from substrate1 precisely along the singulation channel.

Because the geometry of singulation channel 65 was defined usingoptically precise photolithographic processes generally available onlyat a semiconductor foundry level, the alignment tolerances of etch mask50 are very high. Further, because the singulation channels are formedusing isotropic etching penetrating the very minimal depth of integratedcircuit layers 15 and then using the anisotropic DRIE etching in thebulk silicon underneath, precision singulation along die streets 20 isachieved.

In an alternative embodiment of the invention, the second etchingprocess, such as cryogenic DRIE process capable forming singulationchannels through the entire depth of substrate 1, is used to avoid theneed to backthin substrate 1.

Turning to FIG. 6, a view of a preferred focal plane array stackconfiguration is shown, formed from singulated die of the invention andshows the detector chip with interconnected support electronics in a“loaf of bread” orientation.

FIGS. 7a and 7b illustrate a preferred configuration of a convex andconcave large area mosaic focal plane array formed from a plurality ofthose stacks.

FIG. 8 shows yet a further preferred embodiment of a large area mosaicfocal plane array with interconnected support electronics in a coplanarorientation.

Many alterations and modifications may be made by those having ordinaryskill in the art without departing from the spirit and scope of theinvention. Therefore, it must be understood that the illustratedembodiment has been set forth only for the purposes of example and thatit should not be taken as limiting the invention as defined by thefollowing claims. For example, notwithstanding the fact that theelements of a claim are set forth below in a certain combination, itmust be expressly understood that the invention includes othercombinations of fewer, more or different elements, which are disclosedin above even when not initially claimed in such combinations.

The words used in this specification to describe the invention and itsvarious embodiments are to be understood not only in the sense of theircommonly defined meanings, but to include by special definition in thisspecification structure, material or acts beyond the scope of thecommonly defined meanings. Thus if an element can be understood in thecontext of this specification as including more than one meaning, thenits use in a claim must be understood as being generic to all possiblemeanings supported by the specification and by the word itself.

The definitions of the words or elements of the following claims are,therefore, defined in this specification to include not only thecombination of elements which are literally set forth, but allequivalent structure, material or acts for performing substantially thesame function in substantially the same way to obtain substantially thesame result. In this sense it is therefore contemplated that anequivalent substitution of two or more elements may be made for any oneof the elements in the claims below or that a single element may besubstituted for two or more elements in a claim. Although elements maybe described above as acting in certain combinations and even initiallyclaimed as such, it is to be expressly understood that one or moreelements from a claimed combination can in some cases be excised fromthe combination and that the claimed combination may be directed to asubcombination or variation of a subcombination.

Insubstantial changes from the claimed subject matter as viewed by aperson with ordinary skill in the art, now known or later devised, areexpressly contemplated as being equivalently within the scope of theclaims. Therefore, obvious substitutions now or later known to one withordinary skill in the art are defined to be within the scope of thedefined elements.

The claims are thus to be understood to include what is specificallyillustrated and described above, what is conceptually equivalent, whatcan be obviously substituted and also what essentially incorporates theessential idea of the invention.

1. A method for singulating an integrated circuit die from asemiconductor substrate comprised of the steps of, the methodcomprising: providing a semiconductor substrate comprising including afirst surface and a second surface, saidwherein the first surfacehavingcomprises at least one preformed integrated circuit die formedthereon, saidwherein the at least one preformed integrated circuit diefurther comprisingincludes a metal etch mask as part of a metal layerdefined by a reticle during at least one of the same semiconductorprocessing steps as used to fabricate said the at least one preformedintegrated circuit die in a set of semiconductor foundry processes, andsaidwherein the metal etch mask is disposed below a oxynitridepassivation layer, to define a first surface area,; defining asingulation channel with a predetermined first depth on said the firstsurface area using a first etching process,; and, increasing said thefirst depth to a predetermined second depth using a second etchingprocess.
 2. The method of claim 1, further comprising the step ofremoving a predetermined portion of said the second surface, wherebysaid the singulation channel is exposed on said the second surfacewhereby said such that the at least one preformd integrated circuit dieis singulated from said another preformed integrated circuit die or froma portion of the semiconductor substrate.
 3. The method of claim 1,wherein said the first etching process is a reactive ion etchingprocess.
 4. The method of claim 1, wherein said the second etchingprocess is a deep reactive ion etching process.
 5. The method of claim1, wherein said the first etching process is an isotropic etchingprocess.
 6. The method of claim 1, wherein said the second etchingprocess is an anisotropic etching process.
 7. The method of claim 1,wherein said the first etching process is an isotropic etching processand said the second etching process is an anisotropic etching process.8. The method of claim 1, wherein said the first etching process is areactive ion etching process and said the second etching process is adeep reactive ion etching process.
 9. The method of claim 1, whereinsaid the first depth is between 6-12 6 and 12 microns and said thesecond depth is between 50 and 70 microns.
 10. The method of claim 1,wherein said the metal etch mask is comprised of comprises aluminum. 11.The method of claim 1, wherein said the metal etch mask is provided onsaid the first surface during a series of semiconductor process steps.12. The method of claim 2, wherein said the predetermined portion isremoved by a lapping process.
 13. The method of claim 2, wherein saidthe predetermined portion is removed by a CMP chemical-mechanicalpolishing process.
 14. The method of claim 6, wherein said theanisotropic etching process is performed at a temperature of betweenabout −100 −100° C. and about −130 −130° C.
 15. A method for singulatingan integrated circuit, the method comprising: forming a singulationchannel to a first depth in a substrate using a metal etch mask todefine the singulation channel, wherein the metal etch mask is part of ametal layer of an integrated circuit defined by a reticle during one ofthe same semiconductor processing steps as used to fabricate theintegrated circuit in a set of semiconductor foundry processes, andwherein the metal etch mask is located below an oxynitride passivationlayer; and extending the singulation channel to a second depth.
 16. Themethod of claim 15, wherein the integrated circuit is formed on thesubstrate, and wherein the singulation channel is located between theintegrated circuit and another integrated circuit formed on thesubstrate.
 17. The method of claim 15, further comprising removing aportion of the substrate to expose the singulation channel and singulatethe integrated circuit from another integrated circuit or from a portionof the substrate.
 18. The method of claim 17, wherein said removing aportion of the substrate comprises at least one of lapping or grindingthe substrate.
 19. The method of claim 17, wherein said removing aportion of the substrate comprises polishing the substrate using achemical-mechanical polishing process.
 20. The method of claim 17,wherein said extending the singulation channel to a second depthcomprises extending the singulation channel entirely through thesubstrate.
 21. The method of claim 15, wherein said forming asingulation channel is performed using a first etching process, andwherein said extending the singulation channel to a second depth isperformed using a second etching process.
 22. The method of claim 21,wherein the first etching process comprises a reactive ion etchingprocess.
 23. The method of claim 21, wherein the second etching processcomprises a deep reactive ion etching process.
 24. The method of claim21, wherein the first etching process comprises an isotropic etchingprocess.
 25. The method of claim 21, wherein the second etching processcomprises an anisotropic etching process.
 26. The method of claim 15,wherein the first depth is between 6 and 12 microns and the second depthis between 50 and 70 microns.
 27. The method of claim 15, wherein themetal etch mask comprises aluminum.
 28. The method of claim 15, furthercomprising removing at least a portion of the metal etch mask after saidforming a singulation channel.
 29. The method of claim 15, furthercomprising applying a photoresist layer over at least a portion of theintegrated circuit, at least a portion of the oxynitride passivationlayer, or at least a portion of a substrate upon which the integratedcircuit is formed.
 30. The method of claim 15, further comprisingexposing the metal etch mask by removing at least a portion of theoxynitride passivation layer.
 31. A method for singulating a die, themethod comprising: etching a singulation channel in a substrate betweena first integrated circuit and a second integrated circuit using a firstetching process, wherein the singulation channel is formed to a firstdepth using a metal etch mask that is located below an oxynitridepassivation layer and that is part of a metal layer of the firstintegrated circuit that is defined by a reticle during fabrication ofthe first integrated circuit in a set of semiconductor foundryprocesses; and extending the singulation channel to a second depth usinga second etching process that is different from the first etchingprocess.
 32. The method of claim 31, further comprising extending thesingulation channel entirely through the substrate such that the firstintegrated circuit is singulated from the second integrated circuit orfrom a portion of the substrate.
 33. The method of claim 31, furthercomprising removing a portion of the substrate to expose the singulationchannel such that the first integrated circuit is singulated from thesecond integrated circuit or from a portion of the substrate.
 34. Themethod of claim 33, wherein said removing a portion of the substratecomprises at least one of lapping the substrate or polishing thesubstrate using a chemical-mechanical polishing process.
 35. The methodof claim 31, wherein the first etching process is a reactive ion etchingprocess and the second etching process is a deep reactive ion etchingprocess.
 36. The method of claim 31, wherein the first etching processis an isotropic etching process and the second etching process is ananisotropic etching process.
 37. The method of claim 31, wherein thesecond etching process comprises alternating multiple etching phaseswith multiple passivation layer creation phases such that each etchingphase is followed by a deposition of a passivation layer.
 38. The methodof claim 31, wherein the second etching process is performed betweenabout −100° C. and −130° C.
 39. The method of claim 31, furthercomprising applying a photoresist layer over at least a portion of thefirst integrated circuit, at least a portion of the oxynitridepassivation layer, or at least a portion of the substrate.
 40. Themethod of claim 31, further comprising exposing the metal etch mask byremoving at least a portion of the oxynitride passivation layer.
 41. Themethod of claim 31, further comprising removing all of the metal etchmask prior to said extending the singulation channel to a second depth.42. The method of claim 41, further comprising: applying a firstphotoresist layer over at least a portion of the first integratedcircuit, at least a portion of the oxynitride passivation layer, or atleast a portion of the substrate prior to said etching a singulationchannel; and applying a second photoresist layer over at least a portionof the first integrated circuit or at least a portion of the substrateafter said removing all of the metal etch mask.